Single Ion Implanter
Stencil AFM-probe for controlled dopant placement
Enabling atomistic and quantum electronics
The future development of beyond CMOS electronic devices is scheduled to be based on single- or few dopant-QDs. The capability to precisely position every single dopant atom is a fundamental step to enable the path to the future atomistic and quantum electronics. The development of an accessible quantum computer has emerged as a premiere challenge for the development of completely novel approaches in nanofabrication and nanotechnology in the last decade. Spins of electrons and nuclei of dopant atoms embedded in silicon are promising quantum qubit candidates.
Scanning Probe based tool allowing deterministic dopant placement
nano analytik GmbH established a scanning-probe based system as an add-on module that can be used for deterministic dopant placement with any ion beam system, such as
- focused ion beam systems (e.g. using liquid metal ion sources)
- rapidly emerging high-brightness ion sources (e.g. based on magneto-optical traps or on laser cooled ions)
- more conventional broad beam, relatively low-brightness ion source and beam transport systems
Donors can be placed in silicon or diamond.
The SII tool is based on our compact AFMinSEM system that provides high speed non-contact imaging at atomic resolution under high-vacuum conditions.
In combination with our Field-Emission Scanning Probe Lithography (FE-SPL) for manufacturing of control gates and readout, the nano analytik tool paves the way towards the fabrication of qubit arrays.
In summary, a versatile high-vacuum AFM system has been developed that can image at high speeds with atomic resolution without the need of external components. Here, the AFM-positioning accuracy and dynamic sub-5nm stencil functions can be combined with deterministic active substrate type single ion impact detection schemes and the ability to detect single ion impact and also, enables dopant implantation with impact detection integrated into the substrate This technique has been already implemented by several groups in Germany, USA and Australia .
|Vacuum||1e-8 mbar||5e-10mbar after bake-out to 125°C|
|Probe: Active cantilever probe||80pm z-resolution|
|Sample Scanner (X, Y, Z)||60µm x 60µm x 20µm, equipped with capacitive position sensors.||30µm x 30µm x 10µm|
|Sample Scanner Resolution (Position Noise)||0.45nm|0.45nm|0.2nm||0.65nm|0.65nm|0.2nm|
|Coarse Probe-Positioner||18mm x 18mm x10mm [LxWxH]||12mm x 12mm x 10mm [LxWxH]|
|Step And Repeat Doping Field||15mm x 15mm||10mm x 10mm|
|Imaging Modes||Non-contact (Topography, Phase Shift, Error Signal), Contact-Mode, Conductive AFM (C-AFM) & Force-Distance Curve.||Other modes (Kelvin-Probe, MFM, Lithography, SSPR etc.) upon request.|
|System Dimensions||100mm x 70mm x 50mm [LxWxH]||80mm x 40mm x 50mm [LxWxH]|
|System Foot Print||1.20m x 1.40m||1.20m x 1.40m|
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